Ultrathin oxide induced non-volatile nanowire memory performs when bent

Resistive switching random access memory (ReRAM) devices employing stable resistance changes produced in response to applied bias voltages have attracted considerable research interest. Benefits include simple memory structures, low power consumption, high-speed operations and non-volatility. Nonvolatile memory device: performance data…

Resistive switching random access memory (ReRAM) devices employing stable resistance changes produced in response to applied bias voltages have attracted considerable research interest. Benefits include simple memory structures, low power consumption, high-speed operations and non-volatility.

Nonvolatile memory device: performance data

In a recent study, researchers from Hefei University of Technology in China have reported a new kind of high-performance non-volatile memory device induced by interfacial Al oxide. They found that the Al/AlOX/CdTe nanowire/Cu/Au junction exhibited a pronounced hysteresis phenomenon, which allows data to be written and erased.

The scientists believe that the devices are highly suitable for future memory applications thanks to the excellent reproducibility and scalability of the structures.

“The conductance ratio is the highest value ever reported and the retention time is comparable to other nanostructure-based memory devices,” commented team member Chao Xie. “What’s more, flexible memory devices assembled on PET substrates show comparable device characteristics under bending, suggesting the potential for applications in flexible electronics.”

To interpret the working mechanism of the present memory device, the scientists proposed a new interfacial oxide layer theory, which was verified by controlled experiments and X-ray photoemission spectroscopy (XPS) analysis. According to this model, the oxygen vacancies in the oxide layer are capable of trapping or releasing electrons when subject to different bias voltages.

Lin-Bao Luo, who leads the group, said that the team is now trying to improve device performance by examining other interfacial oxides and optimizing the configuration.

The observed oxide layer induced memory behaviour will not only help to provide further insight into the working mechanism, but also facilitate the development of new types of memory device with high performance.

Additional details can be found in the Journal Nanotechnology 24 355203Further reading

About the author
This work was carried out by Prof. Lin-Bao Luo’s group from the Department of Electronic Science and Engineering at Hefei University of Technology. Prof. Luo is group leader of the Laboratory of Micro/Nano Functional Materials and Devices. His research interests include optoelectronic nanodevices, nonvolatile memory devices and surface charge transfer doping of one-dimensional nanostructures. More information about his group can be found at http://nano.hfut.edu.cn/en/index.html.